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The ABB 3BHB013088R0001 (also referenced by 5SHY3545L0010, 3BHE009681R0101, GVC750, and BE101) is a high-performance Integrated Gate-Commutated Thyristor (IGCT) module designed for demanding industrial power electronics applications. This power semiconductor module is engineered for high-voltage switching, providing robust performance in medium-voltage drives and power conversion systems.
| Repetitive Blocking Voltage | 4500V |
| Non-Repetitive Blocking Voltage (VDSM) | 4500V |
| Average On-State Current (ITAV) | 3500A |
| Peak Surge Current (ITSM) | 30kA (1ms) |
| Gate Trigger Voltage (VGT) | 1.5-2.5V |
| Critical di/dt | 1000A/us |
| Peak Gate Current (IG) | 50A |
| Gate Power Dissipation | 20W |
| Junction Temperature Range | -40 to +125 degC |
| Storage Temperature | -40 to +140 degC |
What is the primary function of this module? This is an IGCT (Integrated Gate-Commutated Thyristor) module used for high-power switching in ABB medium-voltage drives and industrial power converters.
What are the key temperature limits for this device? The module is rated for operation at junction temperatures between -40 degC and +125 degC, with a storage temperature range of -40 degC to +140 degC.