• ABB 3BHB013088R0001 5SHY3545L0010 3BHE009681R0101 GVC750 BE101
  • ABB 3BHB013088R0001 5SHY3545L0010 3BHE009681R0101 GVC750 BE101
  • ABB 3BHB013088R0001 5SHY3545L0010 3BHE009681R0101 GVC750 BE101
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ABB 3BHB013088R0001 5SHY3545L0010 IGCT Module

ABB 3BHB013088R0001 5SHY3545L0010 IGCT Module

Description

The ABB 3BHB013088R0001 (also referenced by 5SHY3545L0010, 3BHE009681R0101, GVC750, and BE101) is a high-performance Integrated Gate-Commutated Thyristor (IGCT) module designed for demanding industrial power electronics applications. This power semiconductor module...

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Availability: In stock

SKU: 3BHB013088R0001 5SHY3545L0010 3BHE009681R0101 GVC750 BE101
Vendor: ABB
Category: IGCT Module
Related Series:

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Description

The ABB 3BHB013088R0001 (also referenced by 5SHY3545L0010, 3BHE009681R0101, GVC750, and BE101) is a high-performance Integrated Gate-Commutated Thyristor (IGCT) module designed for demanding industrial power electronics applications. This power semiconductor module is engineered for high-voltage switching, providing robust performance in medium-voltage drives and power conversion systems.

Features

  • High blocking voltage capability up to 4500V.
  • Optimized for high-current applications with an average on-state current of 3500A.
  • Fast switching characteristics with turn-on times under 5 microseconds and turn-off times under 10 microseconds.
  • Supports switching frequencies up to 500Hz.
  • Designed for high reliability in harsh industrial environments with a wide junction temperature range.

Technical Specifications

Repetitive Blocking Voltage 4500V
Non-Repetitive Blocking Voltage (VDSM) 4500V
Average On-State Current (ITAV) 3500A
Peak Surge Current (ITSM) 30kA (1ms)
Gate Trigger Voltage (VGT) 1.5-2.5V
Critical di/dt 1000A/us
Peak Gate Current (IG) 50A
Gate Power Dissipation 20W
Junction Temperature Range -40 to +125 degC
Storage Temperature -40 to +140 degC

Installation Guidelines

  • Ensure all power is disconnected from the drive system before handling or installing the IGCT module.
  • Handle with care to avoid damage to the ceramic housing and contact surfaces; use appropriate ESD protection.
  • Ensure proper thermal contact with the cooling system; use recommended thermal interface materials to maintain junction temperatures within specified limits.
  • Verify that all electrical connections are clean and tightened to the manufacturer's specified torque values to prevent localized heating.
  • Ensure the gate drive unit is properly connected and verified before applying main power to the module.

FAQ

What is the primary function of this module? This is an IGCT (Integrated Gate-Commutated Thyristor) module used for high-power switching in ABB medium-voltage drives and industrial power converters.

What are the key temperature limits for this device? The module is rated for operation at junction temperatures between -40 degC and +125 degC, with a storage temperature range of -40 degC to +140 degC.